Webb15 aug. 2024 · The ohmic contact formed by the Ti/Al/Ni/Au metal system on the n-AlGaN material was studied by using the dot-point transmission line model (CTLM) to optimize … WebbThe current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of …
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Webb21 nov. 2024 · Next, an inter-metal dielectric (IMD) layer 112 is formed on the ILD layer 106, one or more photo-etching process is conducted to remove part of the IMD layer 112, part of the ILD layer 106, and part of the stop layer 104 to form a contact hole, conductive materials are deposited into the contact hole, and a planarizing process such as CMP is … thyrog ab
Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on ...
WebbR&D Senior Engineer - Technology Designer. STMicroelectronics. apr 2024 - Presente4 anni 1 mese. Catania, Italia. • Understand underlying physics, prediction of experimental results with simulation methodologies. • Set up experiment routines, analysis, and understanding of results. • Facilitate company and academia co-innovation. Webb1 nov. 2024 · Ohmic contacts were obtained when the annealing temperature was between 800 and 950 °C. The contacts resistance showed a decreasing tendency with the … Webb7 apr. 2024 · Non-recessed ohmic contact resistance (Rc) on ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure was effectively reduced to a low value of 0.16 Ω·mm. … thyrogastric cluster